Infineon adds new industrial, automotive grade devices in MOSFET portfolio

In static switching applications, power designs focus on minimising conduction losses, optimising thermal behaviour, and achieving compact and lightweight systems while ensuring high quality at a low cost. To meet the needs of next-generation solutions, Infineon Technologies AG is expanding its CoolMOS S7 family of high-voltage superjunction (SJ) MOSFETs (metal-oxide-semiconductor field-effect transistor).

The devices are aiming at solar energy systemsbattery protectionsolid-state relays (SSR), motor-starters and solid-state circuit breakers, as well as PLCslighting control, HV eFuse/eDisconnect, (H)EV on-board chargers.

The portfolio extension includes QDPAK (Quadruple Decawatt Package) top-side cooling (TSC) packages and offers a wide range of features in a small footprint. This makes it highly advantageous for low-frequency switching applications while optimising cost positioning. With the novel high-power QDPAK packaging, they offer an R DS(on) of only 10 mΩ. By minimising conduction losses of the MOSFETs, the CoolMOS S7/S7A solutions contribute to higher overall efficiency and provide a cost-optimised way to improve system performance.

The CoolMOS S7 power switches also manage heat dissipation with improved thermal resistance. With QDPAK packaging, they also reduce or even eliminate the need for heat sinks in solid-state designs, resulting in more compact and lighter systems. The MOSFETs are available in both top-side and bottom-side variants, and feature high-pulse current capability, enabling them to handle sudden surges of current. In addition, they exhibit body diode hardiness to ensure reliable operation during AC line commutation.

With fewer components required, they reduce part count, resulting in flexible system integration, lower BOM (bill of materials) costs, and total cost of ownership (TCO). In addition, these MOSFETs enable shorter reaction times, particularly when breaking a current, facilitating operation.

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